FDMC8462 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 5.8 mW at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 8.0 mW at VGS = 4.5 V, ID = 11.8 A
* Low Profile − 1 mm Max in Power 33
* 100% UIL Tested
.
* DC − DC Conversion
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VD.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max rDS(on) = 5.8 mW at VGS = 10 V, ID.
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